NPN transistor

PNP transistor

Field effect transistor

Uni junction transistor

Insulating layer instead of junction

Using N material instead of P material

Using P material instead of N material

Using N material gate instead of P material

310.02 V

311.17 V

312.25 V

315.20 V

By adding resistance to CRO probe

By adding resistance to trigger level circuit

By increasing time/base attenuator switch position

By increasing volts/cm attenuator switch position

1.0 KHz

10.0 KHz

100.0 KHz

1000.0 KHz