440 V
1000 V
5000 V
6000 V
Low input impedance
High input impedance
Medium input impedance
Infinity input impedence
Fast switching speed
Slow switching speed
Higher power gate signal
Low thermal ionisation of electron-holes
Superior current conduction capability
Low gate signal power requirements
Very low on-state voltage
Low driving power
It has low input impedance
Low efficiency and slow switching
High efficiency and fast switching
IGBT is a gate current driven device