Minimum output signal FET

Medium oscillator signal FET

Metal oxide semiconductor FET

Metal orgamic serial FET

440 V

1000 V

5000 V

6000 V

Low input impedance

High input impedance

Medium input impedance

Infinity input impedence

Fast switching speed

Slow switching speed

Higher power gate signal

Low thermal ionisation of electron-holes

Superior current conduction capability

Low gate signal power requirements

Very low on-state voltage

Low driving power